An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET

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  • Arash Daghighi1,
  • Hassan Rafiei2,
  1. Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran
  2. Graduate Student, Department of Electrical Engineering, Majlesi Branch, Islamic Azad University, Isfahan, Iran

Published in Issue 2024-02-21

How to Cite

Daghighi, A., & Rafiei, H. (2024). An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET. Majlesi Journal of Electrical Engineering, 8(1). https://oiccpress.com/mjee/article/view/5264

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Abstract

In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the transistor. The threshold voltage and drain current are obtained for the first transistor and center ones in the multi-finger structure. The drain induced barrier lowering of the center transistor is increased by 30% and off-current 40 times than that of the first transistor. Simulation results verified the I-gate body contact model in lack of controlling the body voltage comparing with the conventional body contacts e.g. H-gate. Ø§ÙتحÙÛÙ ÙÛ I-GATE اÙاتصا٠اÙجس٠ÙMOSFET أبÙاء اÙعرا٠اÙÙÙضب جزئÛاÙÛ Ùذ٠اÙÙرÙØ© ÙÙÙرة اÙØ£ÙÙÙØ Ûت٠تÙدÛÙ ÙÙÙذج اÙدائرة ÙÙÙتعددة إصبع I-بÙابة اتصÙت ÙÛئة MOSFET اÙسÛÙÛÚ©Ù٠عÙ٠اÙعازÙ. Ûت٠ضبط ÙعاÙ٠اÙÙÙÙذج باستخدا٠Ùحاکاة Ù45 ÙاÙÙÙتر أبÙاء اÙعرا٠nMOSFET. باستخدا٠ÙÙÙØ°Ø¬Ø Ûت٠اÙحصÙÙ ÙÙÙØ°Ø¬Û Ø§ÙجÙد اÙجس٠ÙجÙاز 35 إصبع ÙتطبÛÙÙا عÙ٠اÙتراÙزستÙر. ÙÛت٠اÙحصÙ٠عÙ٠عتبة اÙجÙد ÙاستÙزا٠اÙحاÙÛØ© ÙÙØ£ÙÙ Ù٠اÙتراÙزستÙر ÙÙرکز ÙÛ ÙÛÚ©Ù Ùتعدد اÙأصابع. Ûت٠زÛادة حاجز استÙزا٠بÙع٠اÙØ®Ùاض اÙتراÙزستÙر Ùرکز بÙسبة 30Ùª Ùخارج اÙتÛار 40 Ùرات Ù٠اÙتراÙزستÙر اÙØ£ÙÙ. اÙتحÙÙ Ùتائج اÙÙحاکاة عÙÙ I-بÙابة ÙÙÙذج ÙÛئة اÙاتصا٠ÙÛ Ø¹Ø¯Ù Ø§ÙسÛطرة عÙ٠اÙجÙد اÙجس٠ÙÙارÙØ© Ùع اÙاتصاÙات ÙÛئة اÙتÙÙÛدÛØ© ÙØ«Ù H-اÙبÙابة.

Keywords

  • body resistance. Drain Induced Barrier Lowering,
  • I-gate Body Contact,
  • Silicon-on-Insulator MOSFET,
  • Two-Dimensional Device Simulation
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