A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

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  • Arash Daghighi1,
  • Jafar Hoseini-Teshnizi2,
  • GholamReza Amini3,
  1. Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran
  2. Department of Electrical Engineering, IAU NajafAbad Branch
  3. Faculty of Engineering, Shahrekord University

Published in Issue 2024-02-25

How to Cite

Daghighi, A., Hoseini-Teshnizi, J., & Amini, G. (2024). A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering. Majlesi Journal of Electrical Engineering, 7(1). https://oiccpress.com/mjee/article/view/5234

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Abstract

A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical permittivity. Therefore the fringing field capacitance is smaller. Simulation results of 22 nm silicon-on-diamond transistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase of 5% is observed in the new structure compared with the conventional SOD.

Keywords

  • Drain Induced Barrier Lowering,
  • MOSFET. Hydrodynamic Model,
  • Silicon on Diamond,
  • Ultra Thin Body
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