Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX

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  • Parisa Tavanazadeh1,
  • Arash Daghighi2,
  • Homayoun Mahdavi-Nasab3,
  1. Unknown
  2. Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran
  3. Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Isfahan, Iran

Published in Issue 2024-02-25

How to Cite

Tavanazadeh, P., Daghighi, A., & Mahdavi-Nasab, H. (2024). Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX. Majlesi Journal of Electrical Engineering, 5(2). https://oiccpress.com/mjee/article/view/5163

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Abstract

In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.

Keywords

  • crosstalk. diamond,
  • high resistivity substrate,
  • parasitic capacitance,
  • Ultra thin body silicon-on-insulator MOSFET
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