10.1186/2251-7235-6-8

Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals

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  • Chandra Kumar Dixit1,
  • Anil Kumar Srivastava2,
  1. Department of Physics, Feroze Gandhi Institute of Engineering and Technology
  2. Central Laboratory of Material Science, Kamla Nehru Institute of Physical and Social Sciences

Published in Issue 2023-11-17

How to Cite

1.
Dixit CK, Srivastava AK. Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals. J Theor Appl phys. 2023 Nov. 17;6(1). Available from: https://oiccpress.com/jtap/article/view/2081
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Abstract

AbstractThe doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range â30°C to 200°C and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST single crystal. All samples were investigated for conductivity with increasing temperature.

Keywords

  • Conductivity,
  • Crystal lattice,
  • Dielectric constant,
  • Ferroelectric,
  • Paraelectric
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