OICC Press Journal of Theoretical and Applied Physics 2251-7235 6 1 2023 11 17 Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals 10.1186/2251-7235-6-8 EN Chandra Kumar Dixit Department of Physics, Feroze Gandhi Institute of Engineering and Technology Anil Kumar Srivastava Central Laboratory of Material Science, Kamla Nehru Institute of Physical and Social Sciences 0000-0003-1089-1321 Journal Article 2023 11 17 AbstractThe doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range −30°C to 200°C and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST single crystal. All samples were investigated for conductivity with increasing temperature.