Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX

Authors

• Parisa Tavanazadeh
• Arash Daghighi ¹
• Homayoun Mahdavi-Nasab ²

1. Department of of Electrical Engineering, Shahrekord University, Shahrekord, Iran
2. Department of Electrical Engineering, Najafabad Branch, Islamic Azad University, Najafabad, Isfahan, Iran

Abstract

In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.

Keywords

• Ultra thin body silicon-on-insulator MOSFET
• parasitic capacitance
• high resistivity substrate
• crosstalk. diamond