In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by […]
Active noise control (ANC) works on the principle of destructive interference between the primary disturbance field heard as undesired noise and secondary field which is generated from control actuators. In the simplest system, the disturbance field can be a simple sine wave, and the secondary field is the same sine wave but 180 degrees out of […]