@article{Tavanazadeh_Daghighi_Mahdavi-Nasab_2024, title={Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX}, volume={5}, url={https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/crosstalk-enhancement-in-32-nm-fd-soi-mosfet-using-hr-substrate-and-multilayer-box/}, abstractNote={In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.}, number={2}, journal={Majlesi Journal of Electrical Engineering}, publisher={OICC Press}, author={Tavanazadeh, Parisa and Daghighi, Arash and Mahdavi-Nasab, Homayoun}, year={2024}, month={Feb.}, keywords={Ultra thin body silicon-on-insulator MOSFET, parasitic capacitance, high resistivity substrate, crosstalk. diamond} }