The self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) structures were investigated. As a result of high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. It was shown that in SOD substrate the generated […]
In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by […]
A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical permittivity. […]
In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the transistor. The threshold voltage and drain current […]
In this paper, the Fuzzy PI controller is used to control the hydraulic servo-valves in Saba iron casting facility in Mobarakeh Steel Company. The electronic and control circuitry in the hydraulic servo-valves was damaged and the oil pressure sensor was not working anymore. The roles were bending and slabs were occasionally broken. Any replacement of […]
In this paper, for the first time, Threshold-voltage-adjust-implant is engineered to optimize body current in 45 nm Silicon-on-Insulator (SOI) MOSFET. The peak value and peak position concentration of the Gaussian implant under the gate oxide in the silicon body are varied in order to optimize the body current in SOI technology. The variations affect the […]
