TY - EJOUR
AU - Tavanazadeh, Parisa
AU - Daghighi, Arash
AU - Mahdavi-Nasab, Homayoun
PY - 2024
DA - February
TI - Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX
T2 - Majlesi Journal of Electrical Engineering
VL - 5
L1 - https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/crosstalk-enhancement-in-32-nm-fd-soi-mosfet-using-hr-substrate-and-multilayer-box/
N2 - In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.
IS - 2
PB - OICC Press
KW - Ultra thin body silicon-on-insulator MOSFET, parasitic capacitance, high resistivity substrate, crosstalk. diamond 
EN -