10.52547/mjee.15.4.99

A 57-64 GHz High-gain Amplifier using Ultra-wideband Inductors in the IMNs and Optimization by PCA and SDSM

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  • Ahmadali Ashrafian1,
  • Mahmoud Mohammad-Taheri*2,
  • Mohammad Naser-Moghaddasi1,
  • Mehdi Khatir1,
  • Behbod Ghalamkari1,
  1. Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran.
  2. School of Electrical and Computer Engineering, College of Engineering University of Tehran, Tehran, Iran

Received: 2021-05-01

Accepted: 2021-10-01

Published in Issue 2021-12-15

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This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

Ashrafian, A., Mohammad-Taheri, M., Naser-Moghaddasi, M., Khatir, M., & Ghalamkari, B. (2021). A 57-64 GHz High-gain Amplifier using Ultra-wideband Inductors in the IMNs and Optimization by PCA and SDSM. Majlesi Journal of Electrical Engineering, 15(4). https://doi.org/10.52547/mjee.15.4.99
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Abstract

In this paper, the design and optimization of a cascaded common source four-stage millimeter wave amplifier in a 130 nm CMOS technology has been presented. First, Pi-shaped wideband impedance matching networks (IMNs) were used in the input / output impedance matching networks (IOIMNs) and inter-stages. Next, single stubs were converted to symmetrical double stubs in the IOIMNs and an ultra-wideband inductor replaced each stub. Ultra-wideband inductors were also used in series in the inter-stage IMNs to achieve higher gain in wider frequency bandwidth. Then, the impedance matrices of IOIMNs and inter-stages were calculated using planar circuit analysis (PCA), which is based on the planar waveguide model and segmentation/desegmentation methods (SDSM). Finally, by optimizing the length and characteristic impedance of each segment of microstrip line in the IMNs through using an intelligent algorithm in MATLAB, the excellent IMNs were designed, which resulted in an amplifier with  ,  and  in the frequency range of 57- 64 GHz. With this design method, in addition to incorporating the effect of discontinuities, the fringing fields at the edges of the microstrip as well as the conductor and dielectric losses, the effects of dispersion would be minimized by choosing a substrate whose thickness is much smaller than the wavelength and its relative permittivity is low.

Keywords

  • Dispersion effect,
  • Impedance matching networks,
  • Millimeter wave amplifier,
  • Planar circuit analysis,
  • Segmentation,
  • Desegmentation,
  • Discontinuity effect
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References

  1. B. Razavi, "A 60-GHz CMOS receiver front-end," IEEE Journal of Solid-State Circuits, Vol. 41, pp. 17-22, 2005
  2. Y. Feng, E. Skafidas, and R. Evans, "A 60-GHz low noise amplifier in 0.13-µm CMOS," in Proceedings of the 6th WSEAS International Conference on Instrumentation, Measurement, Circuits and Systems, World Scientific and Engineering Academy and Society (WSEAS). 2007
  3. S. Pellerano, Y. Palaskas, and K. Soumyanath, "A 64GHz 6.5 dB NF 15.5 dB gain LNA in 90nm CMOS," in ESSCIRC 2007-33rd European Solid-State Circuits Conference, IEEE. 2007
  4. Y. S. Lin, C. C. Wang, G. L. Lee, and C. C. Chen, "A high‐performance low‐noise amplifier for 71–76, 76–77, and 77–81 GHz communication systems in 90‐NM CMOS," Microwave and Optical Technology Letters, Vol. 56, pp. 1673-1680, 2014
  5. D. Li, L. Zhang, and Y. Wang, "Design of 60-GHz amplifiers based on over neutralization and optimized inter-stage matching networks in 65-nm CMOS," in 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), IEEE. 2015
  6. C.-L. Ko, C.-H. Li, M.-C. Kuo, and D.-C. Chang, "Constant loss contours of matching networks for millimeter-wave LNA design," IEEE Microwave and Wireless Components Letters, Vol. 26, pp. 939-941, 2016
  7. F. Sagouo Minko and T. Stander, "A comparison of three‐dimensional electromagnetic and RC parasitic extraction analysis of mm‐wave on‐chip passives in SiGe BiCMOS low‐noise amplifiers," International Journal of RF and Microwave Computer‐Aided Engineering, Vol. 30, pp. e22019, 2020
  8. H.-H. Hsieh, P.-Y. Wu, C.-P. Jou, F.-L. Hsueh, and G.-W. Huang, "60GHz high-gain low-noise amplifiers with a common-gate inductive feedback in 65nm CMOS," in 2011 IEEE Radio Frequency Integrated Circuits Symposium, IEEE. 2011
  9. R. Sananes and E. Socher, "52–75 GHz wideband low-noise amplifier in 90 nm CMOS technology," Electronics letters, Vol. 48, pp. 71-72, 2012
  10. S. Ebrahimi and A. MoradiKordalivand, "A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application," Majlesi Journal of Electrical Engineering, Vol. 6, 2012
  11. E. Cohen, S. Ravid, and D. Ritter, "An ultra low power LNA with 15dB gain and 4.4 db NF in 90nm CMOS process for 60 GHz phase array radio," in 2008 IEEE Radio Frequency Integrated Circuits Symposium, IEEE. 2008
  12. C.-C. Huang, H.-C. Kuo, T.-H. Huang, and H.-R. Chuang, "Low-power, high-gain V-band CMOS low noise amplifier for microwave radiometer applications," IEEE microwave and wireless components letters, Vol. 21, pp. 104-106, 2011
  13. G. Su, L. Sun, J. Wen, J. Liu, H. Gao, and L. Zhang, "A 45‐to 57‐GHz low‐power amplifier in 90 nm bulk CMOS," Microwave and Optical Technology Letters, Vol. 59, pp. 2874-2879, 2017
  14. W. L. Chan, J. R. Long, M. Spirito, and J. J. Pekarik, "A 60GHz-band 1V 11.5 dBm power amplifier with 11% PAE in 65nm CMOS," in 2009 IEEE International Solid-State Circuits Conference-Digest of Technical Papers, IEEE. 2009
  15. J. W. Lee and S. G. Lee, "Millimeter‐wave CMOS power amplifier based on tapered device sizing for high efficiency using standard digital CMOS," Microwave and Optical Technology Letters, Vol. 52, pp. 514-518, 2010
  16. T. Quemerais, L. Moquillon, S. Pruvost, J.-M. Fournier, P. Benech, and N. Corrao, "A CMOS class-A 65nm power amplifier for 60 GHz applications," in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), IEEE. 2010
  17. L. Yan and T. K. Johansen, "Design of InP DHBT power amplifiers at millimeter-wave frequencies using interstage matched cascode technique," Microelectronics Journal, Vol. 44, pp. 1231-1237, 2013
  18. X. L. Tang, E. Pistono, P. Ferrari, and J. M. Fournier, "A millimeter‐wave CMOS power amplifier design using high‐Q slow‐wave transmission lines," International Journal of RF and Microwave Computer‐Aided Engineering, Vol. 26, pp. 99-109, 2016
  19. W. Tai and D. S. Ricketts, "A compact, 36 to 72 GHz 15.8 dBm power amplifier with 66.7% fractional bandwidth in 45 nm SOI CMOS," Microwave and Optical Technology Letters, Vol. 56, pp. 166-169, 2014
  20. Y. Jin, M. A. Sanduleanu, and J. R. Long, "A wideband millimeter-wave power amplifier with 20 dB linear power gain and+ 8 dBm maximum saturated output power," IEEE Journal of Solid-State Circuits, Vol. 43, pp. 1553-1562, 2008
  21. J.-A. Han, Z.-H. Kong, K. Ma, K. S. Yeo, and W. M. Lim, "Wideband millimetre-wave CMOS power amplifier using transistor-based inductive source degeneration and specially shielded transformer," IET Microwaves, Antennas & Propagation, Vol. 11, pp. 410-416, 2016
  22. C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, "Millimeter-wave CMOS design," IEEE Journal of solid-state circuits, Vol. 40, pp. 144-155, 2005
  23. M. Fahimnia, M. Mohammad-Taheri, Y. Wang, M. Yu, and S. Safavi-Naeini, "A 59–66 GHz highly stable millimeter wave amplifier in 130 nm CMOS technology," IEEE Microwave and wireless components letters, Vol. 21, pp. 320-322, 2011
  24. H. Jia, B. Chi, L. Kuang, and Z. Wang, "Simple and robust self-healing technique for millimetre-wave amplifiers," IET Circuits, Devices & Systems, Vol. 10, pp. 37-43, 2016
  25. M. S. Hossain, M. Fujishima, T. Yoshida, S. Amakawa, and M. M. Rashid, "Design of CMOS On-Chip Transformer Coupled Matching Network for Millimeter-Wave Amplifiers with Optimal Chip Area," in 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT), IEEE. 2019
  26. A.A. Ashrafian, M. Mohammad-Taheri, M. Naser-Moghaddasi, M. Khatir, and B. Ghalamkari, "Planar circuit analysis of ultra-wideband millimeter-wave inductor using transmission line sections," International Journal of Circuit Theory and Applications, under minor revision
  27. T. Itoh, "Numerical techniques for microwave and millimeter-wave passive structures," 1989
  28. G. Kompa and R. Mehran, "Planar waveguide model for calculating microstrip components," Electronics Letters, Vol. 11, pp. 459-460, 1975
  29. T. Okoshi and T. Takeuchi, "Analysis of planar circuits by segmentation method," Electronics Communications of Japan, Vol. 58, pp. 71-79, 1975
  30. T. Okoshi, Y. Uehara, and T. Takeuchi, "The Segmentation Method-An Approach to the Analysis of Microwave Planar Circuits (Short Papers)," IEEE Transactions on Microwave Theory and Techniques, Vol. 24, pp. 662-668, 1976
  31. R. Chadha and K. Gupta, "Segmentation method using impedance matrices for analysis of planar microwave circuits," IEEE Transactions on Microwave Theory and Techniques, Vol. 29, pp. 71-74, 1981
  32. P. Sharma and K. Gupta, "Desegmentation method for analysis of two-dimensional microwave circuits," IEEE Transactions on Microwave Theory and Techniques, Vol. 29, pp. 1094-1098, 1981
  33. P. Sharma and K. Gupta, "An alternative procedure for implementing the desegmentation method," IEEE transactions on microwave theory and techniques, Vol. 32, pp. 1-4, 1984
  34. D. M. Pozar, "Microwave engineering," 2011