10.1186/2251-7235-6-37

Thermoelectric power of metallic Rb3C60: phonon-drag and carrier diffusion contributions

  1. Materials Science Laboratory, School of Physics, Vigyan Bhawan, Devi Ahilya University
  2. Department of Physics, Ranchi College, Ranchi University Ranchi

Published in Issue 2023-11-17

How to Cite

1.
Varshney D, Singh N. Thermoelectric power of metallic Rb3C60: phonon-drag and carrier diffusion contributions. J Theor Appl phys. 2023 Nov. 17;6(1). Available from: https://oiccpress.com/jtap/article/view/2053

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Abstract

AbstractThermoelectric power (S) of Rb3C60 fullerides in the metallic phase is theoretically estimated. We first develop a Hamiltonian model that incorporates the scattering rates within the relaxation time approximation to estimate the phonon-drag thermoelectric power (Sphdrag) incorporating the scattering of phonons with defects, electrons as carriers, grain boundaries, and phonon-phonon interactions. As a next step, Mott expression within parabolic band approximation is used to analyze the electron diffusive thermoelectric power (Scdiff) using Fermi energy as electron parameter, and Scdiff shows a linear temperature dependence. The Sphdrag is nonzero in both normal and superconducting states. Its behavior is determined by competition among the several operating scattering rates for heat carriers and a balance between diffusive carrier and phonon-drag contributions. Acoustic phonons are effectively scattered by various scatterers for the thermoelectric power. S infers a change in slope above transition temperature and becomes almost linear above 70 K.

Keywords

  • Carrier diffusion,
  • Intermolecular phonon,
  • Phonon drag,
  • RbC,
  • Thermoelectric power