10.1007/s40094-019-0324-5

Calculating the band structure of 3C-SiC using sp3d5s*â+ââ model

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  • Murat Onen1,
  • Marco Turchetti1,
  1. Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

Published in Issue 2023-11-17

How to Cite

1.
Onen M, Turchetti M. Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model. J Theor Appl phys. 2023 Nov. 17;13(1). Available from: https://oiccpress.com/jtap/article/view/1820
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Abstract

AbstractWe report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3d5s* orbitals and spinâorbit coupling (â). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on SlaterâKoster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.

Keywords

  • Binding,
  • Electronic band structure,
  • Semiempirical tight,
  • SiC
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