10.57647/j.jtap.2025.1906.60

The Role of Physical Quantities on the Quantum ‎Dot and Quantum Well Spin-polarized Lasers in ‎Steady and Dynamical States

PDF
  • Abuzar Shakeri*1,
  • Simine Avaz Zadeh ‎2,
  1. Department of Physics, Shi.C., Islamic Azad University, Shiraz, Iran
  2. Department of Physics, Shi.C., Islamic Azad University, Shiraz, Iran ‎

Received: 2025-07-06

Revised: 2025-09-28

Accepted: 2025-11-04

Published in Issue 2025-12-31

Copyright (c) 2025 Abuzar Shakeri, Simine Avaz Zadeh ‎ (Author)

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

1.
Shakeri A, Avaz Zadeh ‎ S. The Role of Physical Quantities on the Quantum ‎Dot and Quantum Well Spin-polarized Lasers in ‎Steady and Dynamical States. J Theor Appl phys. 2025 Dec. 31;19(6). Available from: https://oiccpress.com/jtap/article/view/18014
Crossref
Scopus
Google Scholar
Europe PMC

PDF views: 80

Abstract

In this research, we explore the similar features of quantum dots and quantum wells that function as the optical gain materials in lasers. By utilizing the method of analogy, it allows for a clearer and more analytical interpretation of quantum well lasers, which are more complex than quantum dot lasers. To establish an intuitive picture of conventional lasers with spin-unpolarized carriers and, subsequently, include the influence of spin polarization in spin-lasers, we use a simple bucket model , previously considered only for conventional lasers . Water added to the bucket represents the injection of carriers in the laser, while the water coming out corresponds to the emitted light. The small holes represent carrier losses by spontaneous recombination and the large opening near the top depicts the lasing threshold. In the article, we first discuss the time-dependent rate equations and occupation probabilities related to the rate equations model for classical and spin states of quantum dot lasers and quantum well lasers. The crucial insight in linking the two types of lasers is that the effect of restricted capture time in quantum dot laser function can be accurately mirrored by a suitable choice of the gain compression coefficient in quantum well lasers. Next, we present the two classes of analogies concerning the steady state and dynamical operation separately and explain their restrictions. Finally, we examine the differences between these two analogy models, since the two analogies are not identical, and we extend the correlation to spin lasers

Keywords

  • Laser,
  • Spintronic,
  • Quantum dots,
  • Quantum wells,
  • Optical gain
PDF

References

  1. A. Hohl and A. Gavrielides, “Bifurcation cascade in a semiconductor laser subject to optical feedback,” Phys. Rev. Lett., vol. 82, pp. 1148–1151, 1999, doi: 10.1103/PhysRevLett.82.114
  2. M. C. Soriano, J. Garcia-Ojalvo, R. Mirasso, et al., “Complex photonics: dynamics and applications of delay-coupled semiconductor lasers,” Rev. Mod. Phys., vol. 85, pp. 421–470, 2013, doi: 10.1103/RevModPhys.85.42
  3. J. J. Chen, Y. N. Duan, L. F. Li, et al., “Wideband polarization-resolved chaos with time-delay signature suppression in VCSELs subject to dual chaotic optical injections,” IEEE Access, vol. 6, pp. 66807–66815, 2018,doi :10.1109/ACCESS.2018.287873
  4. F. Y. Lin and J. M. Liu, “Nonlinear dynamics of a semiconductor laser with delayed negative optoelectronic feedback,” IEEE J. Quantum Electron., vol. 39, pp. 562–568, 2003, doi:10.1109/JQE.2003.80933
  5. P. Guo, W. Yang, D. Parekh, et al., “Experimental and theoretical study of wide hysteresis cycles in 1550 nm VCSELs under optical injection,” Opt. Express, vol. 21, pp. 3125–3132, 2013, doi
  6. 364/OE.21.00312
  7. T. Wang, Y. D. Yang, Y. Z. Hao, et al., “Nonlinear dynamics of a semiconductor microcavity laser subject to frequency comb injection,” Opt. Express, vol. 30, pp. 45459–45470, 2022, doi
  8. 364/OE.47565
  9. Z. W. Xu, H. Tian, Z. Zeng, et al., “Time-delay signature suppression of the chaotic signal in a semiconductor laser based on optoelectronic hybrid feedback,” Opt. Express, vol. 31, pp. 39454–39464, 2023, doi: 10.1364/OE.50448
  10. Y. Huang, P. Zhou, Y. Zeng, et al., “Evolution of extreme events in a semiconductor laser subject to chaotic optical injection,” Phys. Rev. A, vol. 105, Art. no. 043521, 2022, doi: 10.1103/PhysRevA.105.04352
  11. L. Y. Zhang, W. Pan, L. S. Yan, et al., “Independently synchronizable groups in networks of delay-coupled semiconductor lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 28, pp. 1–6, 2022, doi: 10.1109/JSTQE.2021.309190
  12. Y. Kawaguchi, T. Okuma, K. Kanno, et al., “Entropy rate of chaos in an optically injected semiconductor laser for physical random number generation,” Opt. Express, vol. 29, pp. 2442–2457, 2021, doi: 10.1364/OE.41169
  13. A. M. Sciamann and K. A. Shore, “Physics and applications of laser diode chaos,” Nat. Photonics, vol. 9, pp. 151–162, 2015, doi: 10.1038/nphoton.2014.32
  14. B. C. Liu, Y. Y. Xie, Y. Z. Liu, et al., “A novel double masking scheme for enhancing security of optical chaotic communication based on two groups of mutually asynchronous VCSELs,” Opt. Laser Technol., vol. 107, pp. 122–130, 2018, doi: 10.1016/j.optlastec.2018.05.02
  15. A. Uchida, K. Amano, M. Inoue, et al., “Fast physical random bit generation with chaotic semiconductor lasers,” Nat. Photonics, vol. 2, pp. 728–732, 2008, doi: 10.1038/nphoton.2008.22
  16. G. Tanaka, T. Yamane, J. B. Héroux, et al., “Recent advances in physical reservoir computing: a review,” Neural Netw., vol. 115, pp. 100–123, 2019, doi: 10.1016/j.neunet.2019.03.00
  17. Y. H. Hung and S. K. Hwang, “Photonic microwave amplification for radio-over-fiber links using period-one nonlinear dynamics of semiconductor lasers,” Opt. Lett., vol. 38, pp. 3355–3358, 2013, doi: 10.1364/OL.38.00335
  18. H. Liu, T. Wang, Q. Jiang, et al., “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics, vol. 5, pp. 416–419, 2011, doi: 10.1038/nphoton.2011.12
  19. S. Chen, W. Li, J. Wu, et al., “Electrically pumped continuous-wave III–V quantum dot lasers on silicon,” Nat. Photonics, vol. 10, pp. 207–312, 2016, doi: 10.1038/nphoton.2016.2
  20. D. Jung, Z. Zhang, J. Norman, et al., “Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency,” ACS Photonics, vol. 5, pp. 1094–1100, 2018, doi: 10.1021/acsphotonics.7b0138
  21. J. C. Norman, D. Jung, Z. Zhang, et al., “A review of high-performance quantum dot lasers on silicon,” IEEE J. Quantum Electron., vol. 55, Art. no. 2000511, 2019, doi: 10.1109/JQE.2019.290150
  22. A. Malik, J. Guo, M. A. Tran, et al., “Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon,” Photon. Res., vol. 8, pp. 1551–1557, 2020, doi: 10.1364/PRJ.39472
  23. Y. Wan, J. C. Norman, Y. Tong, et al., “1.3 μm quantum dot-distributed feedback lasers directly grown on (001) Si,” Laser Photon. Rev., vol. 14, Art. no. 2000037, 2020, doi: 10.1002/lpor.20200003.
  24. A. Capua, L. Rozenfeld, V. Mikhelashvili, et al., “Direct correlation between a highly damped modulation response and ultralow relative intensity noise in an InAs/GaAs quantum dot laser,” Opt. Express, vol. 15, pp. 5388–5393, 2007, doi: 10.1364/OE.15.00538
  25. A. Y. Liu, T. Komljenovic, M. L. Davenport, et al., “Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon,” Opt. Express, vol. 25, pp. 9535–9543, 2017, doi: 10.1364/OE.25.00953
  26. O. B. Shchekin and D. G. Deppe, “1.3 μm InAs quantum dot laser with T0 = 161 K from 0 to 80°C,” Appl. Phys. Lett., vol. 80, pp. 3277–3279, 2002, doi: 10.1063/1.147670
  27. R. L. Sellin, C. Ribbat, M. Grundmann, et al., “Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers,” Appl. Phys. Lett., vol. 78, pp. 1207–1209, 2001, doi: 10.1063/1.135059
  28. L. Olejniczak, K. Panajotov, S. Wieczorek, et al., “Intrinsic gain switching in optically injected quantum dot laser lasing simultaneously from the ground and excited state,” J. Opt. Soc. Am. B, vol. 27, pp. 2416–2423, 2010, doi: 10.1364/JOSAB.27.00241
  29. F. Grillot, J. C. Norman, J. Duan, et al., “Physics and applications of quantum dot lasers for silicon photonics,” Nanophotonics, vol. 9, pp. 1271–1286, 2020, doi: 10.1515/nanoph-2019-057
  30. D. Goulding, S. P. Hegarty, O. Rasskazov, et al., “Excitability in a quantum dot semiconductor laser with optical injection,” Phys. Rev. Lett., vol. 98, Art. no. 153903, 2007, doi: 10.1103/PhysRevLett.98.15390
  31. M. Dillane, B. Tykalewicz, D. Goulding, et al., “Square wave excitability in quantum dot lasers under optical injection,” Opt. Lett., vol. 44, pp. 347–350, 2019, doi: 10.1364/OL.44.00034
  32. L. C. Lin, C. Y. Chen, H. Huang, et al., “Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states,” Opt. Lett., vol. 43, pp. 210–213, 2018, doi: 10.1364/OL.43.00021
  33. H. Lin, Y. H. Hong, S. Ourari, et al., “Quantum dot lasers subject to polarization-rotated optical feedback,” IEEE J. Quantum Electron., vol. 56, Art. no. 2000308, 2020, doi: 10.1109/JQE.2019.295351
  34. D. Arsenijević, A. Schliwa, H. Schmeckebier, et al., “Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers,” Appl. Phys. Lett., vol. 104, Art. no. 181101, 2014, doi: 10.1063/1.487523
  35. C. Wang, B. Lingnau, K. Lüdge, et al., “Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state,” IEEE J. Quantum Electron., vol. 50, pp. 723–731, 2014, doi: 10.1109/JQE.2014.236148
  36. M. Virte, S. Breuer, M. Sciamanna, et al., “Switching between ground and excited states by optical feedback in a quantum dot laser diode,” Appl. Phys. Lett., vol. 105, Art. no. 121109, 2014, doi: 10.1063/1.489657
  37. M. Virte, K. Panajotov, M. Sciamanna, “Mode competition induced by optical feedback in two-color quantum dot lasers,” IEEE J. Quantum Electron., vol. 49, pp. 578–585, 2013, doi: 10.1109/JQE.2013.226072
  38. B. Tykalewicz, D. Goulding, S. P. Hegarty, et al., “All-optical switching with a dual-state, single-section quantum dot laser via optical injection,” Opt. Lett., vol. 39, pp. 4607–4609, 2014, doi: 10.1364/OL.39.00460
  39. B. Kelleher, B. Tykalewicz, D. Goulding, et al., “Two-color bursting oscillations,” Sci. Rep., vol. 7, Art. no. 8414, 2017, doi:10.1038/s41598-017-08751-
  40. B. Tykalewicz, D. Goulding, S. P. Hegarty, et al., “Optically induced hysteresis in a two-state quantum dot laser,” Opt. Lett., vol. 41, pp. 1034–1037, 2016, doi: 10.1364/OL.41.00103
  41. S. Meinecke, B. Lingnau, A. Röhm, et al., “Stability of optically injected two-state quantum-dot lasers,” Ann. Phys., vol. 529, Art. no. 1600279, 2017, doi: 10.1002/andp.20160027
  42. E. A. Viktorov, P. Mandel, I. O’Driscoll, et al., “Low-frequency fluctuations in two-state quantum dot lasers,” Opt. Lett., vol. 31, pp. 2302–2304, 2006, doi: 10.1364/OL.31.00230
  43. E. A. Viktorov, I. Dubinkin, N. Fedorov, et al., “Injection-induced, tunable, all-optical gating in a two-state quantum dot laser,” Opt. Lett., vol. 41, pp. 3555–3558, 2016, doi: 10.1364/OL.41.00355
  44. A. Dehghaninejad, M. M. Sheikhey, H. Baghban, “Dynamic behavior of injection-locked two-state quantum dot lasers,” J. Opt. Soc. Am. B, vol. 36, pp. 1518–1524, 2019, doi: 10.1364/JOSAB.36.00151
  45. C. Wang, J. P. Zhuang, F. Grillot, et al., “Contribution of off-resonant states to the phase noise of quantum dot lasers,” Opt. Express, vol. 24, pp. 29872–29880, 2016, doi: 10.1364/OE.24.02987
  46. F. Grillot, C. Wang, N. A. Naderi, et al., “Modulation properties of self-injected quantum-dot semiconductor diode lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 19, Art. no. 1900812, 2013, doi: 10.1109/JSTQE.2013.224677