Properties of nanoscale copper oxide thin film deposited by plasma focus device
Authors
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Hasan Anousha
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1
Abstract
In this study, a 2 kJ plasma focus device of Mather type was employed to grow Copper Oxide (CuO) thin film at room temperature on the glass substrate. The anode of the device was made of Copper alloys. A mixture of oxygen and argon (O2+ Ar) gases was used as the working gas for CuO deposition. CuO nanoparticles were formed on glass with 0° of the degree concerning the anode axis by 25 shots at 9 cm above the anode. Then CuO thin film prepared by this method was analyzed for their structure, optical, and electrical properties.
According to the XRD results, The Crystallite size of the CuO thin film is between 64 and 122 nm. FESEM images show the nanoparticles growing on the surface almost in a clustered form and with an average value of 80 nm. UV-Vis results indicated that the deposited CuO thin film is found have very low transmittance at the UV region with an increasing transmittance at the visible region to a high transmittance at the near Infrared region. Using UV–vis spectra, the band gap energy and refraction index equals 1.8 eV and 1.9, respectively. The I–V diagram shows that as the applied voltage increases, the current intensity increases exponentially. By a four-probe method, the electrical resistance of CuO thin film is 0.68 ×103 Ω cm, and the dc conductivity for CuO film is equal 13.2 S/m.
