SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎

Authors

Abstract

We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.

Keywords

• Breakdown voltage
• Three-Dimensional Simulation
• Floating Body Effects
• On-resistance
• Cutoff Frequency
• Diffusion Model
• Isothermal Drift Isothermal Drift