@article{SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎_2024, volume={1}, url={https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/soi-device-simulation-of-an-area-efficient-body-contact/}, DOI={10.1234/mjee.v1i1.52}, abstractNote={We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.}, number={1}, journal={Majlesi Journal of Electrical Engineering}, publisher={OICC Press}, year={2024}, month={Feb.}, keywords={On-resistance, Cutoff Frequency, Diffusion Model, Isothermal Drift Isothermal Drift, Breakdown voltage, Three-Dimensional Simulation, Floating Body Effects} }