TY - EJOUR
PY - 2024
DA - February
TI - SOI DEVICE SIMULATION OF AN AREA ‎EFFICIENT BODY CONTACT ‎
T2 - Majlesi Journal of Electrical Engineering
VL - 1
L1 - https://oiccpress.com/Majlesi-Journal-of-Electrical-Engineering/article/soi-device-simulation-of-an-area-efficient-body-contact/
DO - 10.1234/mjee.v1i1.52
N2 - We have used three-dimensional simulation to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved cutoff frequency, reduced on-resistance while attaining satisfactory breakdown voltage. The new body contact is applicable to both high and low voltage SOI MOSFETs.
IS - 1
PB - OICC Press
KW - Breakdown voltage, Three-Dimensional Simulation, Floating Body Effects, On-resistance, Cutoff Frequency, Diffusion Model, Isothermal Drift Isothermal Drift 
EN -