A density functional theory study of electronic and optical properties of armchair and zigzag silicon carbide nanosheets
- Department of Electrical Engineering, south Tehran Branch, Islamic Azad University, Tehran, Iran
- School of Electrical Engineering, Iran University of Science & Technology (IUST), Tehran, Iran
- Department of Physics, South Tehran Branch, Islamic Azad University, Tehran, Iran
Received: 2025-02-12
Revised: 2025-03-09
Accepted: 2025-03-17
Published in Issue 2025-06-01
Copyright (c) 2025 ghobad Mohammad karimi, Mohammad azim Karami, Hassan Ghalami Bavil Olyaee, Javad Karamdel (Author)

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
How to Cite
PDF views: 153
Abstract
Using the density functional theory (DFT) based on first principles calculations, the two-dimensional (2D) nanostructure of silicon carbide (SiC) is investigated in this article. The band structure, density of states, and optical properties of 2D armchair (n,n) and zigzag (n,0) nanostructures (n=3,4,5) are calculated. Calculations show that the introduced nanostructures have a direct energy gap of 2.82 electron volts (eV), a valence band edge of nearly -1.38 eV, and a conduction band edge of almost 1.44 eV. Also, the calculations show that in armchair silicon carbide nanosheets (ASiCNSs) (3,3) at the point of 3.55 electron volts, the absorption coefficient is 432466cm-1, which is the highest absorption coefficient among all studied structures in this paper.
Keywords
- SiC,
- DFT,
- Electronic and optical properties,
- Armchair and zigzag
References
- K. S. Novoselov et al., “Electric field effect in atomically thin carbon films,” Science, vol. 306, no. 5696, pp. 666–669, Oct. 2004, doi: 10.1126/science.1102896.
- “Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure | ACS Nano.” Accessed: Nov. 09, 2023. [Online]. Available: https://achs-prod.acs.org/doi/10.1021/acsnano.5b04233
- Y. Zhao, T. Hou, L. Wu, Y. Li, and S.-T. Lee, “Density Functional Calculations on Silicon Carbide Nanostructures,” J. Comput. Theor. Nanosci., vol. 9, no. 11, pp. 1980–1998, Nov. 2012, doi: 10.1166/jctn.2012.2604.
- S. Chabi and K. Kadel, “Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor,” Nanomaterials, vol. 10, no. 11, Art. no. 11, Nov. 2020, doi: 10.3390/nano10112226.
- “A density functional theory study of electronic properties of transition metals doped silicon carbide monolayer - Majid - 2022 - International Journal of Quantum Chemistry - Wiley Online Library.” Accessed: Nov. 07, 2023. [Online]. Available: https://onlinelibrary.wiley.com/doi/abs/10.1002/qua.26877
- M. Houmad, O. Dakir, M. H. Mohammed, M. Khuili, A. El Kenz, and A. Benyoussef, “Electronic and electrical properties of two single-layer
- tetragonal silicon carbides,” Chem. Phys. Lett., vol. 754, p. 137710, Sep. 2020, doi: 10.1016/j.cplett.2020.137710.
- N. Delavari and M. Jafari, “Electronic and optical properties of hydrogenated silicon carbide nanosheets: A DFT study,” Solid State Commun., vol. 275, pp. 1–7, Jul. 2018, doi: 10.1016/j.ssc.2018.03.004.
- H.-C. Hsueh, G.-Y. Guo, and S. G. Louie, “Electronic and Optical Properties of Silicon Carbide Nanostructures,” in Silicon-based Nanomaterials, H. Li, J. Wu, and Z. M. Wang, Eds., in Springer Series in Materials Science. , New York, NY: Springer, 2013, pp. 139–159. doi: 10.1007/978-1-4614-8169-0_7.
- “Frontiers | Electronic, Magnetic, and Optical Performances of Non-Metals Doped Silicon Carbide.” Accessed: Nov. 07, 2023. [Online]. Available: https://www.frontiersin.org/articles/10.3389/fchem.2022.898174/full
- J. A. Gonçalves, O. F. P. dos Santos, R. J. C. Batista, and S. Azevedo, “First-principle investigation of silicon carbide nanosheets fluorination: Stability trends, electronic, optical and magnetic properties,” Chem. Phys. Lett., vol. 787, p. 139266, Jan. 2022, doi: 10.1016/j.cplett.2021.139266.
- “Mechanical properties of various two-dimensional silicon carbide sheets: An atomistic study,” Superlattices Microstruct., vol. 98, pp. 102–115, Oct. 2016, doi: 10.1016/j.spmi.2016.08.003.
- Q. Wei, Y. Yang, G. Yang, and X. Peng, “New stable two dimensional silicon carbide nanosheets,” J. Alloys Compd., vol. 868, p. 159201, Jul. 2021, doi: 10.1016/j.jallcom.2021.159201.
- Z. Shi, Z. Zhang, A. Kutana, and B. I. Yakobson, “Predicting Two-Dimensional Silicon Carbide Monolayers,” ACS Nano, vol. 9, no. 10, pp. 9802–9809, Oct. 2015, doi: 10.1021/acsnano.5b02753.
- Md. R. Islam, Md. S. Islam, N. Ferdous, K. N. Anindya, and A. Hashimoto, “Spin–orbit coupling effects on the electronic structure of two-dimensional silicon carbide,” J. Comput. Electron., vol. 18, no. 2, pp. 407–414, Jun. 2019, doi: 10.1007/s10825-019-01326-2.
- R. Ansari, S. Rouhi, M. Mirnezhad, and M. Aryayi, “Stability characteristics of single-layered silicon carbide nanosheets under uniaxial compression,” Phys. E Low-Dimens. Syst. Nanostructures, vol. 53, pp. 22–28, Sep. 2013, doi: 10.1016/j.physe.2013.04.014.
- M. Faghihnasiri, M. Rezvani, M. Shabani, and A. H. Firouzian, “The temperature effect on mechanical properties of silicon carbide sheet based on density functional treatment,” Solid State Commun., vol. 227, pp. 40–44, Feb. 2016, doi: 10.1016/j.ssc.2015.11.014.
- J. Hermet, C. Adamo, and P. Cortona, “Towards a Greater Accuracy in DFT Calculations: From GGA to Hybrid Functionals,” in Quantum Simulations of Materials and Biological Systems, J. Zeng, R.-Q. Zhang, and H. R. Treutlein, Eds., Dordrecht: Springer Netherlands, 2012, pp. 3–15. doi: 10.1007/978-94-007-4948-1_1.
- R. Peverati and D. G. Truhlar, “Improving the Accuracy of Hybrid Meta-GGA Density Functionals by Range Separation,” J. Phys. Chem. Lett., vol. 2, no. 21, pp. 2810–2817, Nov. 2011, doi: 10.1021/jz201170d.
- L. Simón and J. M. Goodman, “How reliable are DFT transition structures? Comparison of GGA, hybrid-meta-GGA and meta-GGA functionals,” Org. Biomol. Chem., vol. 9, no. 3, pp. 689–700, Jan. 2011, doi: 10.1039/C0OB00477D.
- Y. Zhao and D. G. Truhlar, “The M06 suite of density functionals for main group thermochemistry, thermochemical kinetics, noncovalent interactions, excited states, and transition elements: two new functionals and systematic testing of four M06-class functionals and 12 other functionals,” Theor. Chem. Acc., vol. 120, no. 1, pp. 215–241, May 2008, doi: 10.1007/s00214-007-0310-x.
- M. G. Medvedev, I. S. Bushmarinov, J. Sun, J. P. Perdew, and K. A. Lyssenko, “Density functional theory is straying from the path toward the exact functional,” Science, Jan. 2017, doi: 10.1126/science.aah5975.
- Y. Zhao and D. G. Truhlar, “Density Functional for Spectroscopy: No Long-Range Self-Interaction Error, Good Performance for Rydberg and Charge-Transfer States, and Better Performance on Average than B3LYP for Ground States,” J. Phys. Chem. A, vol. 110, no. 49, pp. 13126–13130, Dec. 2006, doi: 10.1021/jp066479k.
- E. Zaminpayma, “A density functional theory study of electric, magnetic and optical properties of perfect and defected Germanium Carbide (GeC)
- sheet,” Comput. Condens. Matter, vol. 26, p. e00533, Mar. 2021, doi: 10.1016/j.cocom.2020.e00533.
- B. Streetman and S. Banerjee, Solid State Electronic Devices, 7th edition. Boston: Pearson, 2014.
- J. E. Sipe and E. Ghahramani, “Nonlinear optical response of semiconductors in the independent-particle approximation,” Phys. Rev. B, vol. 48, no. 16, pp. 11705–11722, Oct. 1993, doi: 10.1103/PhysRevB.48.11705.
- W. A. Harrison, Solid State Theory. McGraw-Hill, 1970.
- W. A. (Walter A. Harrison, Solid state theory. New York, McGraw-Hill, 1970. Accessed: Nov. 08, 2023. [Online]. Available: http://archive.org/details/solidstatetheory0000harr
- H. Alborznia and S. T. Mohammadi, “Biaxial stress and strain effects on optical and electronic aspects of B2C nanostructure: a first-principles calculation,” Indian J. Phys., vol. 96, no. 11, pp. 3117–3123, Sep. 2022, doi: 10.1007/s12648-021-02272-1.
- D. J. Griffiths, Introduction to Electrodynamics, 3rd edition. Upper Saddle River, N.J: Prentice Hall, 1999.
- X. Gonze and C. Lee, “Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory,” Phys. Rev. B, vol. 55, no. 16, pp. 10355–10368, Apr. 1997, doi: 10.1103/PhysRevB.55.10355.
- A. Glisson and R. W. Scharstein, “Introduction to electrodynamics, 3rd edition [Book Review],” IEEE Antennas Propag. Mag., vol. 43, no. 1, pp. 102–102, Feb. 2001, doi: 10.1109/MAP.2001.920021.
10.57647/j.spre.2025.0902.11