Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors

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  • R Makhloufi1,
  • A Boussaha2,
  • R Benbouta*1,
  • L Baroura3,
  1. Mechanical Engineering Department, Faculty of Technology, LICEGS Laboratory, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
  2. Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria
  3. Mechanical Engineering Department, University of Constantine 1, Algeria

Revised: 2021-08-01

Accepted: 2021-10-09

Published in Issue 2021-12-30

How to Cite

Makhloufi, R., Boussaha, A., Benbouta, R., & Baroura, L. (2021). Anisotropic and Isotropic Elasticity Applied for the Study of Elastic Fields Generated by Interfacial Dislocations in a Heterostructure of InAs/(001)GaAs Semiconductors. Journal of Solid Mechanics, 13(5), 503-512. https://oiccpress.com/jsm/article/view/12256

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Abstract

This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation.

Keywords

  • semiconductors,
  • Elastic fields,
  • Isotropic,
  • Anisotropic,
  • InAs/GaAs
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