Effects of electric field on magnetic properties of MnxGe1-xdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$Mn_{x}Ge_{1-x}$$end{document} diluted magnetic semiconductors
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Abstract
AbstractWe report the effect of external electric field (EEF) on the magnetic properties of MnxGe1-xdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$small {Mn_{x}Ge_{1-x}}$$end{document}, diluted magnetic semiconductor. We present a Kondo Lattice Model type Hamiltonian with exchange coupling between localized spins, itinerant holes and the EEF. The magnetization, the dispersion and critical temperature (Tcdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$T_{c}$$end{document}) are calculated for different values of EEF parameters (αdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$alpha$$end{document}) using double time temperature-dependent Green function formalism. The enhancement of the (Tcdocumentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} egin{document}$$T_{c}$$end{document}) with the EEF is shown to be very distinct and is in agreement with recent experimental observation and much required for spintronics applications and devices.
