Performance analysis of the novel Quad Gate Stacked nano-sheets FinFET device and its application in common source amplifier

Authors

• Shaifali Ruhil * ¹
• Vandana Khanna ¹
• Umesh Dutta ²
• Neeraj Kumar Shukla ³

1. Department of Electrical, Electronics and Communication Engineering, The NorthCap University, Gurgaon, India.
2. Department of Electronics and Communication Engineering, Manav Rachna International Institute of Research and Studies, Faridabad, India.
3. Department of Electrical Engineering, King Khalid University Abha, Kingdom of Saudi Arabia.

Abstract

Stacked Nano-sheets FinFET device has evolved as a viable alternative to FinFET in designing low power circuits. The performance analysis of the novel Quad Gate Stacked Nano-sheets (QG-SNS) FinFET device and its comparison with FinFET and Stacked Nano-sheets devices have been carried out. QG-SNS FinFET device is designed on Cogenda TCAD tool at 30 nm technology node. Device simulation results indicate a steep sub-threshold slope of 26.7 mV/decade, ON current of is 1.0×10-5 A, and OFF current of is 9.85×10-14 A. The maximum cutoff frequency of 381 GHz is reported. The designed device shows higher early voltage and better device efficiency. Further, the performance-based comparative analysis of common source amplifier circuit designed with QG-SNS FinFET device is done with FinFET based amplifier. Circuit simulations have been performed utilizing the Look up table based Verilog-A model. Amplification of factor 1.93 has been achieved by QG-SNS FinFET based amplifier which is 60.8% better than that achieved by FinFET based amplifier, highlighting the capability of QG-SNS FinFET device for high frequency circuits having input signals of frequency 100 MHz. Average power dissipation and leakage power are reduced by 1.12 and 10-6 times respectively in QG-SNS FinFET based amplifier.

Graphical Abstract

Keywords

• Quad Gate FinFET
• OFF-Current
• Amplification
• Common Source Amplifier
• Leakage power
• Nano-sheet stacking

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