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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
Performance analysis of the novel Quad Gate Stacked nano-sheets FinFET device and its application in common source amplifier

Stacked Nano-sheets FinFET device has evolved as a viable alternative to FinFET in designing low power circuits. The performance analysis of the novel Quad Gate Stacked Nano-sheets (QG-SNS) FinFET device and its comparison with FinFET and Stacked Nano-sheets devices have been carried out. QG-SNS FinFET device is designed on Cogenda TCAD tool at 30 nm […]

j.ijnd.2024.1503.24
Original Article
A study of emerging semi-conductor devices for memory applications

In this paper, a study of the existing SRAM (Static Random Access Memory) cell topologies using various FET (Field Effect Transistor) low power devices has been done. Various low power based SRAM cells have been reviewed on the basis of different topologies, technology nodes, and techniques implemented. The analysis of MOSFET(Metal Oxide Semiconductor Field Effect […]