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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created […]

Original Article
Investigating the impurity of single Carbon atom on the electronic transport of two side-closed (6, 6) single-walled Boron Nitride nanotubes

In this study, the impurity of a single carbon atom on the electronic properties of two side-closed (6, 6) single-walled boron nitride nanotubes ((6, 6) TSC-SWBNNTs) has been investigated in the right, left, and center of this nanotube using the Slater-Koster method and tight-binding approximation. The non-equilibrium Green’s function approach has been used in this […]

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