Investigating the impurity of single Carbon atom on the electronic transport of two side-closed (6, 6) single-walled Boron Nitride nanotubes

Authors

• Ali Mohammad Yadollahi ¹
• Abolfazl Khodadadi ²
• Masoumeh Firouzi ³
• Mojtaba Yaghobi ¹
• Mohammad Reza Niazian * ¹
• Alireza Yekrangi Sendi ⁴

1. Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran.
2. Department of Physics, North Tehran Branch, Islamic Azad University, Tehran, Iran.
3. Department of Physics, Kashan Branch, Islamic Azad University, Kashan, Iran.
4. Department of Mechanical Engineering, Ramsar Branch, Islamic Azad University, Ramsar, Iran.

Abstract

In this study, the impurity of a single carbon atom on the electronic properties of two side-closed (6, 6) single-walled boron nitride nanotubes ((6, 6) TSC-SWBNNTs) has been investigated in the right, left, and center of this nanotube using the Slater-Koster method and tight-binding approximation. The non-equilibrium Green’s function approach has been used in this method. The figures of the transmission spectrum in the impurity state of the carbon atom in the right, left, and center of this nanotube were drawn at bias voltages of 0, 2.5, and 5 V and then compared with those of the DOS (density of states). In energy values where the peak of the transmission spectrum figure and the peak of the DOS exist simultaneously, the resonance state has occurred for the incoming electron. In addition, a new electron tunneling has occurred, and the current change can be observed as a jump and staircase state in the current figure according to the bias voltage. In addition, due to the effect of interference in the two ends of the nanotube and the reduction of the current in some values of the bias voltage, negative differential resistance can also be found, which can be employe Transmissiond as high-speed electronic switches.

Graphical Abstract

Keywords

• Negative differential resistance
• Boron Nitride Nanotubes
• Current
• Electronic Transport

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