Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses. Ahmed Boussaha, Rafik Makhloufi, Rachid Benbouta*, Mourad Brioua, 10.60664/jsm.2024.3031774 XML Requires Subscription PDF downloads: 198
10.60664/jsm.2024.3031774