OICC Press Journal of Solid Mechanics 2008-7683 16 1 2024 09 24 Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses. 65 73 10.60664/jsm.2024.3031774 EN Ahmed Boussaha Laboratory LAMSM, Mechanical Engineering Department, Faculty of Technology, University of Batna 2 Mostafa Ben Boulaid, Batna, Algeria Rafik Makhloufi Mechanical Engineering Department, University of Batna2, Algeria Rachid Benbouta Department of Mechanical Engineering, Faculty of Technology, University of Batna2, Algeria Mourad Brioua Faculty of Technology, University of Batna 2, Algeria Journal Article 2024 09 24 This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs / Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. After establishing the hypotheses of the chosen model, which is a thin bimetallic strip, representing the GaAs / Si semiconductor heterostructure, and the boundary conditions relating to the problem posed, we obtained results of the stress distribution around a dislocation showing that the deformation is greater near the core of the dislocation. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.