AbstractInfluences of source and drain recess structures on SiGe epitaxy growth, SiGe step height, facet formation, ID,sat and resistance performance are investigated. Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm. Under a fixed recess width of 96.3 nm, the deeper the recess, the higher the growth rate of […]
In this study, a SiGe (Si(1-X) GeX x=0.1) thin film solar cell structure based on the carbon nanotube charge collector (CNT) is investigated. The addition of the carbon nanotube layer to cell structure has been proven to change aspects of its physical characteristics, specifically the efficiency of the solar cell. This means that CNT can […]
