AbstractThe synthesis of ultra-long high-quality zinc sulfide (ZnS) nanowires of uniform size on heterogeneous substrates is highly desirable for investigating the fundamental properties of ZnS nanowires and for fabricating integrated functional nanodevices. The present study developed a novel technique for growing ultra-long ZnS nanowires on thin-catalyst-coated substrates. ZnS nanowires were synthesized by chemical vapor deposition […]
Gallium nitride(GaN) is a material with a wide and straight band gap of 3.39eV. This semiconductor has the crystal structure of Wurtzite as one of the most stable phases of matter in environmental conditions. This material and its alloys have a low intrinsic charge carrier density due to their wide band gap, but on the […]
