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Keyword: FBAR device

Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering

AbstractThe study focused on the production of zinc oxide (ZnO) thin films as a dielectric material for use in metal–insulator–semiconductor capacitors. The objective of this study has demonstrated the frequency dependence of conductivity and capacity. Zinc oxide (ZnO) was thin films deposited by a silicon wavelength sputteringmagnetron cathode sputtering. The capacitive properties of ZnO zinc […]