The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts […]
