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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
Numerical optimization of threshold voltage and off-current of a nano-scale symmetric double gate MOSFET based on the genetic algorithm: Various strategies compatible with device applications

In this paper, we optimize the electrical characteristics of Nano-scale symmetric double-gate metal oxide semiconductor field effect transistors (DG-MOSFETs) for digital applications using a genetic algorithm. We use a single-objective genetic algorithm to optimize the threshold voltage (Vth) with a distinct analytical relationship. The optimization of the threshold voltage is accomplished for three cases with […]

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