The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure […]
Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. […]