skip to main content
Menu
IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Review Article
Bio-molecular nano scale devices using first principle paradigm: A comprehensive survey

Computational study plays an important role to discover the potential of the bio-inspired nano scale molecular devices.  Density Functional Theory (DFT) is one of the popular methods to calculate the properties of the molecules which can not be possible with ab initio process, preferably for transition metals. This method is important for electronic structure calculation […]

image
Original Article
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure […]

Original Article
First principle study of structural and electronic transport properties for electrically doped zigzag single wall GaAs nanotubes

Emerging trend in semiconductor nanotechnology motivates to design various crystalline nanotubes. The structural and electronic transport properties of single walled zigzag Gallium Arsenide nanotubes have been investigated using Density Functional Theory (DFT) and Non-Equilibrium Green’s Function (NEGF) based First Principle formalisms. Structural stability and enhanced electronic transmission property of Gallium Arsenide nanotubes (NT’s) have been […]

Original Article
Design of nanoscale self switching diodes with high rectification ratio based on two-dimensional semiconductor hBCN

In this paper, we present a new self-switching diode (SSD) realized with a two-dimensional semiconductor hexagonal boron carbon-nitrogen (hBCN) monolayer. Channel length and width are 4.5 nm and 1.23 nm respectively. The device operation is simulated based on the Extended Huckel method and Nonequilibrium Green’s Function (NEGF) Formalism. The simulation results indicate non-linear I-V characteristics […]

image