skip to main content
Menu
IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
A low-power, wideband-tunable, nano-dimension based CMOS LC ladder filter designed using GmC

This paper proposed LC-ladder filter based on transconductance (GmC) with 130 nm RF CMOS process technology node at 1.2 V. Further, a seventh-order low-pass filter prototype and a sixth-order band-pass filter prototype have been invented to prove high-frequency functioning in a way that is relatively suited for s-parameters modelling. The low pass and band pass elements […]

image
Original Article
Impact of nanometric buried Oxide layer on subthreshold swing and drain conductance of junctionless accumulation mode MOSFET for analog circuit applications

Drain conductance to drain current ratio is analytically investigated for junctionless accumulation mode MOSFET in presence of ultrathin buried oxide layer invoking the effect of conduction band tunnelling, within realistic range of dimensional configurations in nano regime. By taking into account the flatband voltage’s influence and the image charge effect at the oxide-semiconductor interface, subthreshold […]

image