In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions […]
In this article, the high-k gate dielectric effect on the operation of complementary metal oxide semiconductor (CMOS) inverter build using conventional (CL) double-gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and junctionless (JL) double-gate (DG) MOSFET has been explored. It is found that the improvement in inverter performance is more pronounced in CL-DG-MOSFET based […]
