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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
Design of wide dynamic range MOS current mirror using nano dimension MOS field effect transistor

  A nanoscale metal oxide semiconductor field effect transistor based current mirror circuit operating in a sub volt supply for low power analog applications has been proposed in this paper.  Current mirror is a fundamental block of current-mode circuits. In the proposed research, current mirror uses a level-shifted folded flipped voltage follower cell for class […]

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Original Article
Performance enhancement of flipped voltage follower current mirror in nanoscale technology

The trend of technology downscaling to accommodate low supply requirement has been a continuous motivation for the IC industry. The nanoscale dimension MOSFET demands low supply but at the same time results in poor performance of analog circuits due to MOSFET secondary effects. In this paper, a fundamental block of current mode circuit, current mirror […]

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