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IJND-1

International Journal of Nano Dimension (Int. J. Nano Dimens.)

Editor-in-Chief: Dr. Khalil Pourshamsian; Director-in-Charge: Dr. Babak Sadeghi

Online ISSN: 2228-5059

Print ISSN: 2008-8868

Publishes Quarterly

Original Article
High speed Radix-4 Booth scheme in CNTFET technology for high performance parallel multipliers

A novel and robust scheme for radix-4 Booth scheme implemented in Carbon Nanotube Field-Effect Transistor (CNTFET) technology has been presented in this paper. The main advantage of the proposed scheme is its improved speed performance compared with previous designs. With the help of modifications applied to the encoder section using Pass Transistor Logic (PTL), the […]

Original Article
Design of a low power high speed 4-2 compressor using CNTFET 32nm technology for parallel multipliers

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead […]

Original Article
Power-efficient and high-speed design of approximate full adders using CNFET technology

Full adder cells are the major fundamental elements of larger arithmetic circuits, which are mostly located along the critical path of circuits. Therefore, the design of low-power and high-speed full adder cells is critical. In this paper, there are two new inexact full adder cells proposed based on Carbon Nanotube Field Effect Transistor (CNFET) technology. Using the HSPICE simulator […]