This paper proposed LC-ladder filter based on transconductance (GmC) with 130 nm RF CMOS process technology node at 1.2 V. Further, a seventh-order low-pass filter prototype and a sixth-order band-pass filter prototype have been invented to prove high-frequency functioning in a way that is relatively suited for s-parameters modelling. The low pass and band pass elements […]
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well […]
