This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design […]
In this study, a new nanoscale U-shaped tunnel field-effect transistor (US TFET) structure is proposed. In order to start the design process, the drain region of the conventional US TFET is divided into two distinct parts with N+ and N– doping which is named the drain doping engineering (DDE). It is considered that the tunneling […]
