In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in […]
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) […]
Quantum-dot cellular automata technology has emerged as an alternative for complementary metal oxide semiconductor technology in very-large-scale integration (VLSI) circuits. The basis and structure of QCA technology are different from CMOS technology, and it is necessary to redesign the existing circuits based on the characteristics of QCA technology. In this paper, first, five-input and three-input […]
