This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well […]
In this article, the high-k gate dielectric effect on the operation of complementary metal oxide semiconductor (CMOS) inverter build using conventional (CL) double-gate (DG) metal oxide semiconductor field effect transistor (MOSFET) and junctionless (JL) double-gate (DG) MOSFET has been explored. It is found that the improvement in inverter performance is more pronounced in CL-DG-MOSFET based […]