In this paper, we present a new self-switching diode (SSD) realized with a two-dimensional semiconductor hexagonal boron carbon-nitrogen (hBCN) monolayer. Channel length and width are 4.5 nm and 1.23 nm respectively. The device operation is simulated based on the Extended Huckel method and Nonequilibrium Green’s Function (NEGF) Formalism. The simulation results indicate non-linear I-V characteristics […]
