10.1007/s40089-016-0182-y

Investigating the effect of some parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor

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  • Najmeh Valed Karimi*1,
  • Yaghoub Pourasad2,
  1. Electrical Engineering Department, Islamic Azad University, Rasht, Guilan, IR
  2. Electrical Engineering Department, Urmia University of Technology, Urumia, IR
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Published in Issue 2016-08-25

How to Cite

Valed Karimi, N., & Pourasad, Y. (2016). Investigating the effect of some parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor. International Nano Letters, 6(4 (December 2016). https://doi.org/10.1007/s40089-016-0182-y
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Abstract

Abstract This paper studies p-i-n tunneling carbon nanotube field-effect transistor to investigate the effect of various parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor. Tunneling carbon nanotube field-effect transistor (T-CNTFET) has been simulated using non-equilibrium Green’s function (NEGF), and the transmission was conducted through inelastic scattering. Besides the evaluation of device performance, various parameters of the channel were also compared. One of the parameters is considered as the variable, while other parameters of the channel are constant. Then, improved characteristics were discussed by selection of some channel parameters. T-CNTFET with CNT (10, 0) with oxide thickness = 1 nm shows reduced sub-threshold swing (18 mV/decade).

Keywords

  • Channel diameter,
  • Channel length (L),
  • Gate oxide thickness,
  • Non-equilibrium Green’s function (NEGF),
  • Tunneling carbon nanotube field-effect transistor (T-CNTFET)
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