OICC Press International Nano Letters 2228-5326 6 4 (December 2016) 2016 08 25 Investigating the effect of some parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor 10.1007/s40089-016-0182-y EN Najmeh Valed Karimi Electrical Engineering Department, Islamic Azad University, Rasht, Guilan, IR Yaghoub Pourasad Electrical Engineering Department, Urmia University of Technology, Urumia, IR Journal Article 2016 08 25 Abstract This paper studies p-i-n tunneling carbon nanotube field-effect transistor to investigate the effect of various parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor. Tunneling carbon nanotube field-effect transistor (T-CNTFET) has been simulated using non-equilibrium Green’s function (NEGF), and the transmission was conducted through inelastic scattering. Besides the evaluation of device performance, various parameters of the channel were also compared. One of the parameters is considered as the variable, while other parameters of the channel are constant. Then, improved characteristics were discussed by selection of some channel parameters. T-CNTFET with CNT (10, 0) with oxide thickness = 1 nm shows reduced sub-threshold swing (18 mV/decade).