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MJEE-1

Majlesi Journal of Electrical Engineering

Editor-in-Chief: Farbod Razzazi, PhD

Online ISSN: 2345-3796

Print ISSN: 2345-377X

Publishes Quarterly

Original Article
Investigation of Temperature Effects in 45nm Silicon-on-Diamond MOSFET Transistor

In this paper, the self-heating effects (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) are investigated. As a result of the high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. Our hydrodynamic simulation results show that […]

Original Article
Body Current Optimization Using Threshold-Voltage-Adjust-Implant Engineering in 45nm SOI MOSFET

In this paper, for the first time, Threshold-voltage-adjust-implant is engineered to optimize body current in 45 nm Silicon-on-Insulator (SOI) MOSFET. The peak value and peak position concentration of the Gaussian implant under the gate oxide in the silicon body are varied in order to optimize the body current in SOI technology. The variations affect the […]