10.1186/2193-8865-3-80

Study on the correlation between crystallite size and optical gap energy of doped ZnO thin film

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  • Said Benramache*1,
  • Ali Arif2,
  • Okba Belahssen1,
  • Abderrazak Guettaf2,
  1. Material Sciences Laboratory, Faculty of Science, University of Biskra, Biskra, 07000, DZ
  2. Electrical Engineering Department, Faculty of Technology, University of Biskra, Biskra, 07000, DZ
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Published in Issue 11-11-2013

How to Cite

Benramache, S., Arif, A., Belahssen, O., & Guettaf, A. (2013). Study on the correlation between crystallite size and optical gap energy of doped ZnO thin film. Journal of Nanostructure in Chemistry, 3(1 (December 2013). https://doi.org/10.1186/2193-8865-3-80
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Abstract

Abstract In the present paper, we have studied a new approach to the description ofcorrelation between the optical and structural properties of ZnO thin films withdoping levels of Al, Co, and In. The doped zinc oxide thin films were depositedusing ultrasonic spray technique on a glass substrate at 350°C. Thecorrelation between structural and optical properties with doping level suggeststhat the crystallite size of the films is predominantly estimated by the bandgapenergy and the concentration of Al, Co, and In. Also, the gap energy of dopedfilms was estimated by the crystallite size and doping level. The measurement inthe crystallite size and optical gap energy of doped films with correlation isequal to the experimental data. The minimum error value was estimated in dopedZnO thin films with indium and cobalt. Thus, results indicate that such Co-dopedZnO thin films are chemically purer and have many fewer defects and lessdisorder, owing to an almost complete chemical decomposition.

Keywords

  • ZnO,
  • Thin films,
  • Semiconductor doping,
  • Crystallite size,
  • Optical gap energy,
  • Correlation
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