10.1007/s40089-018-0249-z

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

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  • Girish U. Kamble1,
  • Nitin P. Shetake1,
  • Suhas D. Yadav1,
  • Aviraj M. Teli2,
  • Dipali S. Patil3,
  • Sachin A. Pawar3,
  • Milind M. Karanjkar4,
  • Pramod S. Patil2,
  • Jae C. Shin3,
  • Marius K. Orlowski5,
  • Rajanish K. Kamat6,
  • Tukaram D. Dongale*1,
  1. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, IN
  2. Department of Physics, Shivaji University, Kolhapur, 416004, IN
  3. Department of Physics, Yeungnam University, Gyeongsan, Gyeonbuk, 38541, KR
  4. Department of Physics, Vivekanand College, Kolhapur, 416003, IN
  5. Bradley Department of Electrical and Computer Engineering, Virginia Tech., Blacksburg, VA, 24061, US
  6. Department of Electronics, Shivaji University, Kolhapur, 416004, IN
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Published in Issue 2018-09-19

How to Cite

Kamble, G. U., Shetake, N. P., Yadav, S. D., Teli, A. M., Patil, D. S., Pawar, S. A., Karanjkar, M. M., Patil, P. S., Shin, J. C., Orlowski, M. K., Kamat, R. K., & Dongale, T. D. (2018). Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device. International Nano Letters, 8(4 (December 2018). https://doi.org/10.1007/s40089-018-0249-z
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Abstract

Abstract In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO 2 /SS thin film metal–insulator–metal device. The voltage-induced resistive switching leads to clockwise and counter-clockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I–V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO 2 /SS metal–insulator–metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.

Keywords

  • Memristor,
  • Resistive switching (RS),
  • Filamentary RS,
  • Homogeneous RS,
  • Meminductive effect,
  • MnO2
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References

  1. Meena et al. (2014) Overview of emerging nonvolatile memory technologies https://doi.org/10.1186/1556-276X-9-526
  2. Tarkhan and Nejad (2018) Design of a memristor based fuzzy processor https://doi.org/10.1016/j.aeue.2017.10.039
  3. Anusudha and Prabaharan (2018) A versatile window function for linear ion drift memristor model—a new approach https://doi.org/10.1016/j.aeue.2018.04.020
  4. Babacan et al. (2017) Memristor emulator with tunable characteristic and its experimental results https://doi.org/10.1016/j.aeue.2017.07.012
  5. Babacan and Kaçar (2017) Memristor emulator with spike-timing-dependent-plasticity https://doi.org/10.1016/j.aeue.2016.12.025
  6. Yesil (2018) A new grounded memristor emulator based on MOSFET-C https://doi.org/10.1016/j.aeue.2018.05.004
  7. Chua (1971) Memristor-the missing circuit element https://doi.org/10.1109/TCT.1971.1083337
  8. Strukov et al. (2008) The missing memristor found https://doi.org/10.1038/nature06932
  9. Kim et al. (2012) A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications https://doi.org/10.1021/nl203687n
  10. Sassine et al. (2016) Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices https://doi.org/10.1116/1.4940129
  11. Simanjuntak et al. (2016) Status and prospects of ZnO-based resistive switching memory devices https://doi.org/10.1186/s11671-016-1570-y
  12. Peng et al. (2010) Electrode dependence of resistive switching in Mn-doped ZnO: filamentary versus interfacial mechanisms https://doi.org/10.1063/1.3428365
  13. Muenstermann et al. (2010) Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices https://doi.org/10.1002/adma.201001872
  14. Biju et al. (2011) Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films https://doi.org/10.1002/pssr.201004455
  15. Khot et al. (2018) Bipolar resistive switching and memristive properties of hydrothermally synthesized TiO2 nanorod array: effect of growth temperature https://doi.org/10.1016/j.matdes.2018.04.046
  16. Dongale et al. (2018) An electronic synapse device based on TiO2 thin film memristor https://doi.org/10.1166/jno.2018.2297
  17. Mullani et al. (2018) Effect of Ag-doping on the hydrothermally grown ZnO thin film electronic synapse device https://doi.org/10.1680/jbibn.17.00010
  18. Dongale et al. (2017) Bio-mimicking the synaptic weights, analog memory, and forgetting effect using spray deposited WO3 memristor device https://doi.org/10.1016/j.mee.2017.10.003
  19. Pawar et al. (2017) A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method https://doi.org/10.1016/j.mssp.2017.07.009
  20. Huang et al. (2013) Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate https://doi.org/10.1021/am4007287
  21. Tsai et al. (2011) Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices https://doi.org/10.1063/1.3629788
  22. Kubicek et al. (2015) Uncovering two competing switching mechanisms for epitaxial and ultrathin strontium titanate-based resistive switching bits https://doi.org/10.1021/acsnano.5b02752
  23. Kim et al. (2013) Graphene/MnO2-based composites reduced via different chemical agents for supercapacitors https://doi.org/10.1016/j.jpowsour.2013.03.146
  24. Ede et al. (2015) DNA-encapsulated chain and wire-like β-MnO2 organosol for oxidative polymerization of pyrrole to polypyrrole https://doi.org/10.1039/C4CP04236K
  25. Xie et al. (2015) Effect of the crystal plane figure on the catalytic performance of MnO2 for the total oxidation of propane https://doi.org/10.1039/C5CE00058K
  26. Jeong et al. (2012) Emerging memories: resistive switching mechanisms and current status https://doi.org/10.1088/0034-4885/75/7/076502
  27. Yang et al. (2008) Memristive switching mechanism for metal/oxide/metal nanodevices https://doi.org/10.1038/nnano.2008.160
  28. Yang et al. (2009) A family of electronically reconfigurable nanodevices https://doi.org/10.1002/adma.200900822
  29. Waser et al. (2009) Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges https://doi.org/10.1002/adma.200900375
  30. Chua (2014) If it’s pinched it’sa memristor https://doi.org/10.1088/0268-1242/29/10/104001
  31. Valov et al. (2013) Nanobatteries in redox-based resistive switches require extension of memristor theory https://doi.org/10.1038/ncomms2784
  32. Qingjiang et al. (2014) Memory impedance in TiO2 based metal-insulator-metal devices https://doi.org/10.1038/srep04522
  33. Jo et al. (2010) Nanoscale memristor device as synapse in neuromorphic systems https://doi.org/10.1021/nl904092h
  34. Dongale et al. (2017) Effect of surfactants on the data directionality and learning behaviour of Al/TiO2/FTO thin film memristor-based electronic synapse https://doi.org/10.1007/s10008-016-3459-1
  35. Dongale et al. (2018) Mimicking the synaptic weights and human forgetting curve using hydrothermally grown nanostructured CuO memristor device https://doi.org/10.1166/jnn.2018.14264
  36. Dongale et al. (2015) Development of Ag/ZnO/FTO thin film memristor using aqueous chemical route https://doi.org/10.1016/j.mssp.2015.07.004
  37. Dongale et al. (2015) Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method https://doi.org/10.1007/s13391-015-4180-4
  38. Dongale et al. (2014) Nanostructured TiO2 thin film memristor using hydrothermal process https://doi.org/10.1016/j.jallcom.2014.01.093
  39. Ventra and Pershin (2013) On the physical properties of memristive, memcapacitive and meminductive systems https://doi.org/10.1088/0957-4484/24/25/255201
  40. Han et al. (2014) Realization of the meminductor https://doi.org/10.1021/nn502655u
  41. Saraf et al. (2013) Memory diodes with nonzero crossing https://doi.org/10.1063/1.4775673
  42. Tappertzhofen et al. (2014) Nanobattery effect in RRAMs-implications on device stability and endurance https://doi.org/10.1109/LED.2013.2292113
  43. Biolek et al. (2011) Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’ https://doi.org/10.1049/el.2011.2913
  44. Pershin and Di Ventra (2011) Memory effects in complex materials and nanoscale systems https://doi.org/10.1080/00018732.2010.544961
  45. You et al. (2006) Impedance spectroscopy characterization of resistance switching NiO thin films prepared through atomic layer deposition https://doi.org/10.1063/1.2392991
  46. Greenlee et al. (2013) Comparison of interfacial and bulk ionic motion in analog memristors https://doi.org/10.1109/TED.2012.2225145