10.1007/s40089-017-0219-x

A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport

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  • Seyed Saleh Ghoreishi*1,
  • Reza Yousefi1,
  • Kamyar Saghafi2,
  • Habib Aderang1,
  1. Department of Electrical Engineering, Nour Branch, Islamic Azad University, Nour, IR
  2. Department of Electrical Engineering, Shahed University, Tehran, 3319118651, IR
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Published in Issue 2017-08-20

How to Cite

Ghoreishi, S. S., Yousefi, R., Saghafi, K., & Aderang, H. (2017). A numerical study of the nanoribbon field-effect transistors under the ballistic and dissipative transport. International Nano Letters, 7(3 (September 2017). https://doi.org/10.1007/s40089-017-0219-x
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Abstract

Abstract In this article, a detailed performance comparison is made between ballistic and dissipative quantum transport of metal oxide semicondutor-like graphene nanoribbon field-effect transistor, in ON and OFF-state conditions. By the self-consistent mode-space non-equilibrium Green’s function approach, inter- and intraband scattering is accounted and the role of acoustic and optical phonon scattering on the performance of the devices is evaluated. We found that in this structure the dominant mechanism of scattering changes according to the ranges of voltage bias. Under large biasing conditions, the influence of optical phonon scattering becomes important. Also, the ambipolar and OFF-current are impressed by the phonon-assisted band-to-band tunneling and increased considerably compared to the ballistic conditions, although sub-threshold swing degrades due to optical phonon scattering.

Keywords

  • Optical phonon scattering (OP),
  • Acoustic phonon scattering (AP),
  • Born approximation,
  • Graphene nanoribbon (GNR),
  • Band-to-band tunneling (BTBT)
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