10.1007/s40089-016-0180-0

Modeling of relative intensity noise and terminal electrical noise of semiconductor lasers using artificial neural network

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  • A. Rezaei1,
  • L. Noori*1,
  1. Electrical Engineering Department, Kermanshah University of Technology, Kermanshah, IR
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Published in Issue 2016-06-08

How to Cite

Rezaei, A., & Noori, L. (2016). Modeling of relative intensity noise and terminal electrical noise of semiconductor lasers using artificial neural network. International Nano Letters, 6(3 (September 2016). https://doi.org/10.1007/s40089-016-0180-0
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Abstract

Abstract In this paper, artificial neural network (ANN) is used to predict the source laser’s relative intensity noise (RIN) and the terminal electrical noise (TEN) of semiconductor lasers. For this purpose, the multi-layer perceptron (MLP) neural network trained with the back propagation algorithm is used. To develop this model, the normalized bias current and frequency are selected as the input parameters and the RIN and TEN of semiconductor lasers are selected as the output parameters. The obtained results show that the proposed ANN model is in a good agreement with the numerical method, and a small error between the predicted values and the numerical solution is obtained. Therefore, the proposed ANN model is a useful, reliable, fast and cheap tool to predict the RIN and TEN of semiconductor lasers.

Keywords

  • Artificial neural network,
  • Multi-layer perceptron,
  • Relative intensity noise,
  • Terminal electrical noise,
  • Bias current
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References

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